Ujjwal K. Das
E-mail: ukdas@udel.edu
Phone: 302-831-3523
Education: Ph.D. (Physics) – Jadavpur University, India
Affiliations: Department of Materials Science and Engineering, Department of Electrical and Computer Engineering
Google Scholar: https://scholar.google.com/citations?user=MG5YtkcAAAAJ&hl=en
Dr. Ujjwal Das works on solar photovoltaic devices based on broad range of materials system: wafer silicon, thin film amorphous silicon, polycrystalline cadmium telluride and organic-inorganic hybrid perovskite thin films. He joined IEC in 2004 and currently manages and oversees research on IEC’s Si solar cell program.
Research Interests
- Thin film growth and deposition processes for high throughput manufacturing
- Defect passivation for Si, CdTe and Perovskite based solar cells
- Carrier selective contacts through interface engineering
- Advanced device design, modeling and development of high efficiency solar cells
- Long-term reliability studies of solar cells
Featured Publications
- U. K. Das, R. Theisen, A. Hua, A. Upadhyaya, I. Lam, T. K. Mouri, N. Jiang, D. Hauschild, L. Weinhardt, W. Yang, A. Rohatgi, and C. Heske, “Efficient passivation of n-type and p-type silicon surface defects by hydrogen sulfide gas reaction,” Journal of Physics: Condensed Matter 33, 464002 (2021). DOI: 10.1088/1361-648X/ac1ec8
- A.J. Harding, A. G. Kuba, B. E. McCandless, U. K. Das, K. D. Dobson, B. A. Ogunnaike, and W. N. Shafarman, “The growth of methylammonium lead iodide perovskites by close space vapor transport,” RSC Advances 10, 16125 (2020). https://doi.org/10.1039/D0RA01640C
- U. K. Das, M. Z. Burrows, M. Lu, S. Bowden, and R. W. Birkmire, “Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films,” Applied Physics Letters 92, 063504 (2008). https://doi.org/10.1063/1.2857465
- M. Lu, S. Bowden, U. Das, and R. Birkmire, “Interdigitated back contact silicon heterojunction solar cell and the effect of front surface passivation,” Applied Physics Letters 91, 063507 (2007). https://doi.org/10.1063/1.2768635
- U. K. Das, T. Yasuda, and S. Yamasaki, “Fast diffusion of H and creation of dangling bonds in hydrogenated amorphous silicon studied by in situ ESR,” Physical Review Letters 85, 2324 (2000). https://doi.org/10.1103/PhysRevLett.85.2324
View full list of publications in google scholar: https://scholar.google.com/citations?user=MG5YtkcAAAAJ&hl=en